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Igor Rouzine
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Distribution function of conductance of finite-size inhomogeneous barrier structure. in Hopping and Related Phenomena. Singapore. Fritzsche and M. Pollak. World Scientific. pp. 217–241. (1990)
Size effect in the longitudinal hopping conduction of a narrow two-dimensional channel. Phys Rev B Condens Matter. 42(17), pp.11203-11207 (1990).
. Distribution function of hopping conductance fluctuations of a short GaAs field-effect transistor channel. Solid State Communic. . 72, pp.169–172 (1989).
. Fluctuations of the hopping conductance of one- dimensional systems. Sov. Phys. JETP. 68, pp.642–647 (1989).
. Statistical properties of mesoscopic conductivity fluctuations in a short-channel GaAs field-effect transistor. Sov. Phys. JETP . 69, pp.1229–1236 (1989).
. Theory of hopping conductivity due to long-wavelength excitation. Sov. Phys. Semicond. 23, pp.1164–1167 (1989).
. Theory of low- temperature photoconductivity and photoluminescence in amorphous semiconductors. Sov. Phys. JETP . 69, pp.773–782 (1989).
. Influence of localized states in a barrier on a fluctuation tunnel current flowing across a metal-semiconductor contact. Sov. Phys. Semicond. . 22, pp.1254–1257 (1988).
. Mesoscopic behavior of the transverse hopping conductivity of an amorphous film. Sov. Phys. Semicond. . 22, pp.799–805 (1988).
. Transverse hopping conductivity of amorphous films in strong electric fields. Sov. Phys. Semicond. . 22, pp.401–408 (1988).
. Hopping conductivity of metal- semiconductor-metal contacts. Sov. Phys. Semicond. . 21, pp.370–373 (1987).
. Temperature dependence of fluctuation excess currents flowing across a metal-semiconductor contact. Sov. Phys. Semicond. . 21, pp.283–285 (1987).
. Transparency fluctuations in randomly inhomogeneous barriers of finite area. Sov. Phys. JETP . 65, pp.1273–1282 (1987).
. Fractal dimensionality of silver dendrites in a two-dimensional ionic-conducting systems. Sov. Phys. Solid State . 28, pp.1073–1074 (1986).
. Mesoscopic behavior of the temperature dependence of the transverse hopping conductivity of an amorphous film. JETP Lett. . 43, pp.563–565 (1986).
. Fluctuation mechanism of excess tunnel currents in reverse-biased p-n- junctions. Sov. Phys. Semicond. 19, pp.745–750 (1985).
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